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IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor

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IRFB4229PBF Power Mosfet module PDP SWITCH N-Channel MOSFET Transistor

Model Number : IRFB4229PBF

Certification : new & original

Place of Origin : original factory

MOQ : 20pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 9000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Description : N-Channel 250 V 46A (Tc) 330W (Tc) Through Hole TO-220AB

Gate-to-Source Voltage : ±30 V

Pulsed Drain Current : 180 A

Repetitive Peak Current : 91 A

Linear Derating Factor : 2.2 W/°C

Operating Junction and Storage Temperature : -40 to + 175°C

Soldering Temperature for 10 seconds : 300°C

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PDP SWITCH IRFB4229PbF



Features 

• Advanced Process Technology 

• Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications 

• Low EPULSE Rating to Reduce Power Dissipation in PDP Sustain,

Energy Recovery and Pass Switch Applications 

• Low QG for Fast Response 

• High Repetitive Peak Current Capability for Reliable Operation 

• Short Fall & Rise Times for Fast Switching 

• 175°C Operating Junction Temperature for Improved Ruggedness 

• Repetitive Avalanche Capability for Robustness and Reliability

Key Parameters

VDS min 250 V
VDS (Avalanche) typ. 300 V
RDS(ON) typ. @ 10V 38 mΩ
IRP max @ TC= 100°C 91 A
TJ max 175 °C

Description 

This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.

Absolute Maximum Ratings

Parameter Max. Units
VGS Gate-to-Source Voltage ±30 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 46 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 33 A
IDM Pulsed Drain Current 180 A
IRP @ TC = 100°C Repetitive Peak Current  91 A
PD @TC = 25°C Power Dissipation 330 W
PD @TC = 100°C Power Dissipation 190 W
Linear Derating Factor 2.2 W/°C
TJ TSTG Operating Junction and Storage Temperature Range -40 to + 175 °C
Soldering Temperature for 10 seconds 300 °C
Mounting Torque, 6-32 or M3 Screw 10lbin (1.1Nm) N

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Product Tags:

power mosfet ic

      

silicon power transistors

      
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